Synthesis and structure of nanocrystal-assembled bulk GaN

被引：41

作者：

Chen, XL

Cao, YG

Lan, YC

Xu, XP

Li, JQ

Lu, KQ

Jiang, PZ

Bai, ZG

Yu, YD

Liang, JK

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Peking Univ, Dept Phys, Electron Microscopy Lab, Beijing 100087, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 01期

基金：

中国国家自然科学基金;

关键词：

wurtzite GaN; nanocrystal-assembled bulk; synthesis; HRTEM;

D O I：

10.1016/S0022-0248(99)00522-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new condensed form of GaN, nanocrystal-assembled bulk (NAB) GaN, was obtained directly from reactions of metal Ga and NH4Cl in liquid ammonia at 350-500 degrees C. High-resolution transmission electron microscopy observations reveal that the NAB GaN consists of well-crystallized nanocrystals with wurtzite structure. The synchronous densificated NAB GaN is transparent to visible light while the constituted nanocrystals have an average size of about 12 nm. A possible synthesis mechanism is discussed. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 78.66.Jg; 81.20. -n.

引用

收藏

页码：208 / 212

页数：5

相关论文

共 18 条

[1] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].

Balkas, CM ;

Davis, RF .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312

[2] GROWTH OF BORON MONOPHOSPHIDE CRYSTALS BY CHEMICAL TRANSPORT [J].

CHU, TL ;

JACKSON, JM ;

SMELTZER, RK .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (04) :254-&

[3] Influence of precursor route on the photoluminescence of bulk nanocrystalline gallium nitride [J].

Coffer, JL ;

Johnson, MA ;

Zhang, LB ;

Wells, RL ;

Janik, JF .

CHEMISTRY OF MATERIALS, 1997, 9 (12) :2671-+

[4] Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method [J].

Dwilinski, R ;

Doradzinski, R ;

Garczynski, J ;

Sierzputowski, L ;

Baranowski, JM ;

Kaminska, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3) :46-49

[5] Detonations of gallium azides: A simple route to hexagonal GaN nanocrystals [J].

Frank, AC ;

Stowasser, F ;

Sussek, H ;

Pritzkow, H ;

Miskys, CR ;

Ambacher, O ;

Giersig, M ;

Fischer, RA .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (14) :3512-3513

[6] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].

Han, WQ ;

Fan, SS ;

Li, QQ ;

Hu, YD .

SCIENCE, 1997, 277 (5330) :1287-1289

[7] TOPOCHEMICAL CONTROL IN THE SOLID-STATE CONVERSION OF CYCLOTRIGALLAZANE INTO NANOCRYSTALLINE GALLIUM NITRIDE [J].

HWANG, JW ;

CAMPBELL, JP ;

KOZUBOWSKI, J ;

HANSON, SA ;

EVANS, JF ;

GLADFELTER, WL .

CHEMISTRY OF MATERIALS, 1995, 7 (03) :517-525

[8] Poly(imidogallane): Synthesis of a crystalline 2-D network solid and its pyrolysis to form nanocrystalline gallium nitride in supercritical ammonia [J].

Jegier, JA ;

McKernan, S ;

Gladfelter, WL .

CHEMISTRY OF MATERIALS, 1998, 10 (08) :2041-+

[9] Exciton region reflectance of homoepitaxial GaN layers [J].

Korona, KP ;

Wysmolek, A ;

Pakula, K ;

Stepniewski, R ;

Baranowski, JM ;

Grzegory, I ;

Lucznik, B ;

Wroblewski, M ;

Porowski, S .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :788-790

[10] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA [J].

MONEMAR, B .

PHYSICAL REVIEW B, 1974, 10 (02) :676-681