Recent Progress in Short- to Long-Wave Infrared Photodetection Using 2D Materials and Heterostructures

被引:158
作者
Guan, Xinwei [1 ]
Yu, Xuechao [2 ,3 ]
Periyanagounder, Dharmaraj [4 ]
Benzigar, Mercy Rose [5 ]
Huang, Jing-Kai [1 ]
Lin, Chun-Ho [1 ]
Kim, Jiyun [1 ]
Singh, Simrjit [1 ]
Hu, Long [1 ]
Liu, Guozhen [5 ]
Li, Dehui [6 ]
He, Jr-Hau [7 ]
Yan, Feng [8 ]
Wang, Qi Jie [2 ,3 ]
Wu, Tom [1 ]
机构
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Nanyang Technol Univ, Ctr OptoElect & Biophoton, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Nanyang Technol Univ, Photon Inst, Singapore 639798, Singapore
[4] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[5] Univ New South Wales, Fac Engn, Grad Sch Biomed Engn, Sydney, NSW 2052, Australia
[6] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[7] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
[8] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA
来源
ADVANCED OPTICAL MATERIALS | 2021年 / 9卷 / 04期
基金
中国国家自然科学基金; 新加坡国家研究基金会;
关键词
2D materials; device architecture; heterostructures; long-wave infrared; mid-wave infrared; photodetectors; short-wave infrared; FIELD-EFFECT TRANSISTORS; DER-WAALS HETEROSTRUCTURES; ULTRA-BROAD-BAND; P-N-JUNCTION; HIGH-PERFORMANCE; HIGH-RESPONSIVITY; HIGH-DETECTIVITY; QUANTUM DOTS; SPECTRAL RESPONSE; ROOM-TEMPERATURE;
D O I
10.1002/adom.202001708
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their flexible composition and tunable optoelectronic properties. This review presents the recent progress in IR detectors composed of 2D materials and their hybrid structures, including graphene, black phosphorous, transition metal dichalcogenides, halide perovskite as well as other new layered materials and their heterostructures. The focus is on the short-wave, mid-wave, and long-wave infrared regimes, which pose a grand challenge for rational materials and device designs. The dependence of the device performance on the optical and electronic properties of 2D materials is extensively discussed, aiming to present the general strategies for designing optoelectronic devices with optimal performance. Furthermore, the recent results on 2D material-based heterostructures are presented with an emphasis on the relationship between band alignment, charge transfer, and IR photodetection. Finally, a summary is given as well as the discussion of existing challenges and future directions.
引用
收藏
页数:24
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