共 50 条
[31]
Vapor phase homoepitaxial growth of 6H and 4H silicon carbide
[J].
SILICON CARBIDE AND RELATED MATERIALS 1995,
1996, 142
:201-204
[32]
Ab initio quasiparticle energies in 2H, 4H, and 6H SiC
[J].
PHYSICAL REVIEW B,
1998, 58 (11)
:6795-6799
[33]
Rectifying contacts to n-type 6H and 4H-SiC
[J].
SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM, PTS 1-3: 1ST CONFERENCE ON FUTURE SCIENCE & EARTH SCIENCE MISSIONS; 1ST CONFERENCE ON SYNERGISTIC POWER & PROPULSION SYSTEMS TECHNOLOGY; 1ST CONFERENCE ON APPLICATIONS OF THERMOPHYSICS IN MICROGRAVITY; 2ND CONFERENCE ON COMMERCIAL DEVELOPMENT OF SPACE; - 2ND CONFERENCE ON NEXT GENERATION LAUNCH SYSTEMS; 14TH SYMPOSIUM ON SPACE NUCLEAR POWER AND PROPULSION,
1997, (387)
:851-856
[40]
Oxidation kinetics of 3C, 4H, and 6H silicon carbide
[J].
SILICON CARBIDE AND RELATED MATERIALS 1995,
1996, 142
:633-636