Λ6H Modeled as Λ4H + n + n

被引：0

作者：

Gibson, B. F. ^{[1
]}

Afnan, I. R. ^{[2
]}

机构：

[1] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[2] Flinders Univ S Australia, Sch Chem & Phys Sci, Adelaide, SA 5001, Australia

来源：

FEW-BODY SYSTEMS | 2014年 / 55卷 / 8-10期

关键词：

LI-6;

D O I：

10.1007/s00601-014-0816-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A three-body calculation for the and hypernuclei has been undertaken. The respective cores are . The interactions in the system, modeled as , are reasonably well known. For example, the p n interaction is well determined by the p n scattering data, the -p interaction can be fitted to the binding energy. The -n interaction can be fitted to alpha-n scattering data. For the He-4-n system the s-wave can be modeled alternatively as a repulsive potential or as an attractive potential with a forbidden bound state. We explore these alternatives in He-6, because the interaction comes into play in modeling as well as in our + n + n model of , where the valence neutrons are Pauli blocked from the s-shell of the core nucleus.

引用

页码：913 / 916

页数：4

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[21] Electronic structure of the neutral silicon vacancy in 4H and 6H SiC [J].

Wagner, M ;

Magnusson, B ;

Chen, WM ;

Janzén, E ;

Sörman, E ;

Hallin, C ;

Lindström, JL .

PHYSICAL REVIEW B, 2000, 62 (24) :16555-16560

[22] Evidence for phosphorus on carbon and silicon sites in 6H and 4H SiC [J].

Yan, F. ;

Devaty, R. P. ;

Choyke, W. J. ;

Gali, A. ;

Bhat, I. B. ;

Larkin, D. J. .

Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 :585-588

[23] High temperature simulation of 6H and 4H silicon carbide MOSFETs [J].

Shams, SF ;

Sundaram, KB ;

Chow, LC .

PROCEEDINGS IEEE SOUTHEASTCON '98: ENGINEERING FOR A NEW ERA, 1998, :271-274

[24] Nitrogen-related point defect in 4H and 6H SiC [J].

Zvanut, M. E. ;

van Tol, J. .

PHYSICA B-CONDENSED MATTER, 2007, 401 :73-76

[25] Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SIC [J].

Wagner, M ;

Magnusson, B ;

Sörman, E ;

Hallin, C ;

Lindström, JL ;

Chen, WM ;

Janzén, E .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :663-666

[26] Growth of 4H and 6H SiC in trenches and around stripe mesas [J].

Nordell, N ;

Karlsson, S ;

Konstantinov, AO .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :131-134

[27] Growth of 4H and 6H SiC in trenches and around stripe mesas [J].

Industrial Microelectronics Cent, Kista, Sweden .

Mater Sci Forum, pt 1 (131-134)

[28] Effects of microwave fields on recombination processes in 4H and 6H SiC [J].

Son, NT ;

Sorman, E ;

Chen, WM ;

Bergman, JP ;

Hallin, C ;

Kordina, O ;

Konstantinov, AO ;

Monemar, B ;

Janzen, E ;

Hofmann, DM ;

Volm, D ;

Meyer, BK .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) :1929-1932

[29] Growth of volume silicon carbide monocrystals of 4H and 6H polytypes [J].

Maksimov, AY ;

Maltsev, AA ;

Yushin, NK ;

Barash, IS .

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1995, 21 (10) :20-24

[30] A complex defect related to the carbon vacancy in 4H and 6H SiC [J].

Son, NT ;

Chen, WM ;

Lindström, JL ;

Monemar, B ;

Janzén, E .

PHYSICA SCRIPTA, 1999, T79 :46-49

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