Observation of photoluminescence emission in ferromagnetic semiconductor GaCrN

被引：17

作者：

Hashimoto, M ^{[1
]}

Tanaka, H ^{[1
]}

Asano, R ^{[1
]}

Hasegawa, S ^{[1
]}

Asahi, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 21期

关键词：

D O I：

10.1063/1.1756678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of GaN-based diluted magnetic semiconductor GaCrN were studied. The GaCrN layers were grown by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy. They exhibited ferromagnetic behavior at room temperature and strong photoluminescence (PL) emission at 3.29 eV (10 K). The PL emission peak energy of the GaCrN decreases with increasing temperature in accordance with the Varshini formula similar to the GaN excitonic transition peak. The 3.29 eV PL emission was assigned to be a band-to-band transition in GaCrN from the temperature- and the excitation-power-density dependences of the PL. (C) 2004 American Institute of Physics.

引用

页码：4191 / 4193

页数：3

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