Room-Temperature Ferromagnetic Ga1-xMnAs (x ≤ 0.05) Nanowires: Dependence of Electronic Structures and Magnetic Properties on Mn Content

被引:25
作者
Kim, Han Sung [1 ]
Cho, Yong Jae [1 ]
Kong, Kang Jun [1 ]
Kim, Chang Hyun [1 ]
Chung, Gyeong Bok [1 ]
Park, Jeunghee [1 ]
Kim, Jae-Young [2 ]
Yoon, Jungbum [3 ]
Jung, Myung-Hwa [3 ]
Jo, Younghun [3 ]
Kim, Bongsoo [4 ]
Ahn, Jae-Pyoung [5 ]
机构
[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea
[2] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea
[3] Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South Korea
[4] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[5] Korea Inst Sci & Technol, Adv Anal Ctr, Seoul 136791, South Korea
关键词
GAAS; SEMICONDUCTOR; (GA; MN)AS; INJECTION; GROWTH;
D O I
10.1021/cm8033388
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ga1-xMnxAs nanowires were synthesized with finely controlled Mn contents (x = 0, 0.01, 0.02, 0.03, and 0.05) by the vapor transport method. They consisted of single-crystalline GaAs nanocrystals (avg. diameter = 60 nm) grown along the [111] direction. The Mn doping decreases the lattice constant, most significantly at x approximate to 0.03. X-ray pholoelectron spectroscopy revealed that as the Mn content increases, the binding energy of Ga 2p shifts to a higher energy, which can be correlated with the hybridization between the Mn2+ ions and the holes. X-ray absorption spectroscopy and X-ray magnetic circular dichroism confirmed that the Mn2+ ions substitute into the tetrahedrally coordinated Ga sites and that the magnetic moment is maximized at x = 0.03, where the lattice constant is minimized and the binding energy of Ga 2p is maximized. The magnetization measurement revealed that all of these nanowires exhibited room-temperature ferromagnetic behavior, which is also observed most significantly for x approximate to 0.03.
引用
收藏
页码:1137 / 1143
页数:7
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