Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures

被引：13

作者：

Denda, Junya ^{[1
]}

Uryu, Kazuya ^{[1
]}

Suda, Keita ^{[1
]}

Watanabe, Masahiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Elect & Appl Phys, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 04期

基金：

日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; BAND-STRUCTURE; DIODE; SI(111); GROWTH; LAYER;

D O I：

10.7567/APEX.7.044103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel resistance switching memory scheme using Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well (QW) structures grown on a Si substrate has been proposed, and write-read-erase cyclic memory operation has been demonstrated by applying pulsed input voltage sequences at room temperature. A resistance switching voltage of less than 1.0 V, a peak current density of 30-72 kA/cm(2), and an ON/OFF ratio of 1.9-30 were observed. Under an appropriate bias condition, a retention time of more than 315 h and cyclic pulsed operation corresponding to write-read-erase-read for more than 4500 cycles were achieved. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 31 条

[1] ReRAM technology; challenges and prospects [J].