Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

被引：5

作者：

Okita, Koshi ^{[1
]}

Inaba, Katsuhiko ^{[2
]}

Yatabe, Zenji ^{[3
]}

Nakamura, Yusui ^{[1
,4
]}

机构：

[1] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8608555, Japan

[2] Xray Res Lab, Riga Ku, Tokyo 1968666, Japan

[3] Kumamoto Univ, Prior Org Innovat & Excellence, Kumamoto 8608555, Japan

[4] Kumamoto Phoen, Kumamoto 8620901, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 06期

关键词：

R-PLANE SAPPHIRE; THIN-FILMS; OPTICAL-PROPERTIES; C-SAPPHIRE; GROWTH; DIFFRACTION;

D O I：

10.7567/JJAP.57.065503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2 theta/omega scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure. (C) 2018 The Japan Society of Applied Physics

引用

页数：7

共 33 条

[1]

Adachi S., 2009, PROPERTIES SEMICONDU, P150

[2] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[3] Structural, morphological and optical properties of annealed ZnS thin films deposited by spray technique [J].

Bouguila, N. ;

Bchiri, D. ;

Kraini, M. ;

Timoumi, A. ;

Halidou, I. ;

Khirouni, K. ;

Alaya, S. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (12) :9845-9852

[4] Hybrid multiple diffraction in semipolar wurtzite materials: (01(1)over-bar2)-oriented ZnMgO/ZnO heterostructures as an illustration [J].

de Prado, Esther ;

Carmen Martinez-Tomas, M. ;

Deparis, Christiane ;

Munoz-Sanjose, Vicente ;

Zuniga-Perez, Jesus .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2017, 50 :1165-1173

[5] Highly transparent ZnS buffer layer prepared by ultrasonic spray pyrolysis for photovoltaic applications [J].

Deepa, K. G. ;

Anantha, Sunil M. ;

Jampana, Nagaraju .

JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS, 2017, 126 :188-193

[6] Enhanced SAW characteristics of a-plane AlN epitaxial films using ZnO buffer layer [J].

Fu, Sulei ;

Li, Qi ;

Wang, Minjuan ;

Song, Cheng ;

Zeng, Fei ;

Pan, Feng .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (05) :3912-3919

[7] Quality-enhanced AIN epitaxial films grown on c-sapphire using ZnO buffer layer for SAW applications [J].

Fu, Sulei ;

Li, Qi ;

Gao, Shuang ;

Wang, Guangyue ;

Zeng, Fei ;

Pan, Feng .

APPLIED SURFACE SCIENCE, 2017, 402 :392-399

[8] ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers [J].

Ichino, Kunio ;

Kashiyama, Shota ;

Nanba, Nao ;

Hasegawa, Hiroyasu ;

Abe, Tomoki .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (08) :1476-1479

[9] Lattice relaxation of ZnS grown on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy [J].

Ichino, Kunio ;

Nishigaki, Akinori ;

Yamauchi, Akiyoshi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 8-9, 2012, 9 (8-9) :1744-1747

[10]

Inaba K., 2017, RIGAKU J, V33, P10

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