Origin of dielectric relaxations in polycrystalline RbHSeO4 above room temperature

被引：0

作者：

Checa, O. ^{[1
]}

Vargas, R. A. ^{[2
]}

Diosa, J. E. ^{[2
]}

机构：

[1] Univ Nacl Colombia, Dept Ciencias Basicas, Palmira, Colombia

[2] Univ Valle, Dept Fis, Cali 25360, Colombia

来源：

REVISTA MEXICANA DE FISICA | 2013年 / 59卷 / 06期

关键词：

Ionic conductivity; dielectric relaxations; PARA-ELECTRIC PHASE; FERROELECTRIC PROPERTIES; REGIME; CRYSTALS; RUBIDIUM; TRANSITIONS; SELENATES; NH4HSEO4;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the present paper, the dielectric relaxation properties of RbHSeO4 have been studied by means of impedance spectroscopy measurements over wide ranges of frequencies at several isotherms (T<415 K). The frequency dependence of the permittivity data reveal a distinct dielectric relaxation at low frequency, which is about 385 Hz at 310 K, then it shifts to higher frequencies (similar to 40 kHz) as the temperature increases. The f(max). vs. reciprocal T shows an activated relaxation process with an activation energy of 0.9 eV, which is in close agreement with that associated with transport of charge carriers. We suggest that the observed dielectric relaxation could be attributed to polarization induced by the proton jump and selenate tetrahedral reorientations. The displacement of mobile H+ proton accompanied by SeO4-2 tetrahedra reorientations create structural distortion in both sublattices which induce localized dipoles like HSeO4

引用

页码：540 / 544

页数：5

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