Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy

被引：30

作者：

Fujita, S

Watanabe, H

Maruno, S

Ichikawa, M

Kawamura, T

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,ANGSTROM TECHNOL PARTNERSHIP,TSUKUBA,IBARAKI 305,JAPAN

[2] YAMANASHI UNIV,DEPT PHYS,KOFU,YAMANASHI 400,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.120567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found that terrace contrast of oxidized Si(001) substrate observed with a scanning reflection electron microscopy (SREM) is reversed by progress in thermal oxidation by one atomic layer of Si. The cause for such terrace contrast reversion is that reflection electron intensity depends on Si-bond direction at oxide/Si interface. This fact was confirmed by calculations based on a multiple scattering theory. The motion of oxide/Si-bulk interface can be, thus, observed by SREM. The reversion and continuous change of the terrace contrast indicate that oxidation occurs monolayer by monolayer on Si(001) substrate. (C) 1997 American Institute of Physics.

引用

页码：885 / 887

页数：3

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