Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG-MOSFET) with a metal-over-gate architecture

被引：46

作者：

Ionescu, AM ^{[1
]}

Pott, V ^{[1
]}

Fritschi, R ^{[1
]}

Banerjee, K ^{[1
]}

Declercq, MJ ^{[1
]}

Renaud, P ^{[1
]}

Hibert, C ^{[1
]}

Fluckiger, P ^{[1
]}

Racine, GA ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Elect Lab LEG, CH-1015 Lausanne, Switzerland

来源：

PROCEEDING OF THE 2002 3RD INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN | 2002年

关键词：

Analytical models; Biomembranes; Micromechanical devices; MOS capacitors; MOSFET circuits; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Switching circuits; Voltage;

D O I：

10.1109/ISQED.2002.996794

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid-state MOS transistor and a sits vended metal membrane in a unique metal-over-gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage operation and high-performance. It is demonstrated that the use of a thin gate oxide (<20nm) is essential for a high C-on/Co-ff ratio (>100) and a low spring constant (<100N/m) is needed for low voltage (<5V) actuation. An adapted fabrication process is reported.

引用

页码：496 / 501

页数：6