Low resistivity transparent conducting CdO thin films deposited by DC reactive magnetron sputtering at room temperature

被引：81

作者：

Zhou, Qiang ^{[1
]}

Ji, Zhenguo ^{[1
]}

Hu, BinBin ^{[1
]}

Chen, Chen ^{[1
]}

Zhao, Lina ^{[1
]}

Wang, Chao ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, CMSCE, Hangzhou 310027, Peoples R China

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 02期

基金：

中国国家自然科学基金;

关键词：

cadmium oxide; thin films; magnetron sputtering; electrical properties;

D O I：

10.1016/j.matlet.2006.05.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conducting cadmium oxide (CdO) films were deposited on PET (polyethylene terephthalate) substrate by DC reactive magnetron sputtering at room temperature. All the films deposited at room temperature were polycrystalline in rock-salt structure. Dependences of the physical properties of the CdO films on the oxygen partial pressure were systematically studied. The films deposited at low oxygen flow rate were (200) oriented, while the films deposited at an oxygen flow rate greater than 20 sccm were (111) oriented. The average grain size of the CdO films decreased as the oxygen flow rate increases as determined by XRD and SEM. The Hall effect measurement showed that CdO films have high concentration, low resistivity, and high mobility. Both the mobility and the concentration of the carrier decreased with the increase of the oxygen flow rate. A minimum sheet resistance of 36.1 Omega/rectangle, or a lowest resistivity of 5.44 x 10(-4) Omega cm (6.21 X 10(20)/cm(3), mu = 19.2 cm(2)/Vs) was obtained for films deposited at an oxygen flow rate of 10 sccm. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：531 / 534

页数：4

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