Optical properties of ZnTe films prepared by molecular beam epitaxy

被引:29
作者
Franta, D
Ohlídal, I
Klapetek, P
Montaigne-Ramil, A
Bonanni, A
Stifter, D
Sitter, H
机构
[1] Masaryk Univ, Fac Sci, Lab Plasma Phys & Plasma Sources, CS-61137 Brno, Czech Republic
[2] Masaryk Univ, Fac Sci, Dept Phys Elect, CS-61137 Brno, Czech Republic
[3] Czech Metrol Inst, Brno 63800, Czech Republic
[4] Johannes Kepler Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria
关键词
ellipsometry; reflectometry; optical constants; ZnTe epitaxial films;
D O I
10.1016/j.tsf.2004.04.036
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the optical properties of ZnTe epitaxial thin films prepared by molecular beam epitaxy (MBE) onto GaAs single crystal substrates are studied using the combined optical method employing a simultaneous interpretation of experimental data obtained by means of variable angle spectroscopic ellipsometry (VASE) and near-normal spectroscopic rellectometry (NNSR). The spectral dependences of both the optical constants, i.e. the refractive index and extinction coefficient, characterizing these films are presented within the spectral region 230-850 nm. It is shown that the optical properties of the ZnTe epitaxial films depend on the values of their thickness. This conclusion was found using the model of the optical constants exhibiting a profile across these films. A roughness of the upper boundaries of the ZnTe films and the existence of a very thin native oxide layer (NOL) on these boundaries are taken into account within the optical analysis. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:193 / 202
页数:10
相关论文
共 22 条
[1]   OPTICAL-PROPERTIES OF GAAS AND ITS ELECTROCHEMICALLY GROWN ANODIC OXIDE FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
SCHWARTZ, GP ;
GUALTIERI, GJ ;
STUDNA, AA ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :590-597
[2]   Strain dependence and deformation potential of the E1 and E1+Δ1 transitions of ZnTe grown on a GaAs (001) substrate [J].
Bahng, JH ;
Jang, MS ;
Lee, M ;
Choi, JC ;
Park, HL ;
Kim, KJ ;
Lee, C .
SOLID STATE COMMUNICATIONS, 2001, 120 (9-10) :343-346
[3]  
Beckmann P., 1963, SCATTERING ELECTROMA
[4]  
Franta D, 2003, ACTA PHYS SLOVACA, V53, P95
[5]   Characterization of the boundaries of thin films of TiO2 by atomic force microscopy and optical methods [J].
Franta, D ;
Ohlídal, I ;
Klapetek, P ;
Pokorny, P .
SURFACE AND INTERFACE ANALYSIS, 2002, 34 (01) :759-762
[6]   Influence of overlayers on determination of the optical constants of ZnSe thin films [J].
Franta, D ;
Ohlídal, I ;
Klapetek, P ;
Montaigne-Ramil, A ;
Bonanni, A ;
Stifter, D ;
Sitter, H .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) :1873-1880
[7]   Ellipsometric parameters and reflectances of thin films with slightly rough boundaries [J].
Franta, D ;
Ohlidal, I .
JOURNAL OF MODERN OPTICS, 1998, 45 (05) :903-934
[8]  
Franta D, 2000, ACTA PHYS SLOVACA, V50, P411
[9]   Analysis of slightly rough thin films by optical methods and AFM [J].
Franta, D ;
Ohlídal, I ;
Klapetek, P .
MIKROCHIMICA ACTA, 2000, 132 (2-4) :443-447
[10]   Optical characterization of chalcogenide thin films [J].
Franta, D ;
Ohlídal, I ;
Frumar, M ;
Jedelsky, J .
APPLIED SURFACE SCIENCE, 2001, 175 (175-176) :555-561