Strain distribution in MgxZn1-xO layers with various content of Mg grown on a-plane sapphire by plasma-assisted molecular beam epitaxy

被引：17

作者：

Wierzbicka, A. ^{[1
]}

Pietrzyk, M. A. ^{[1
]}

Reszka, A. ^{[1
]}

Dyczewski, J. ^{[1
]}

Sajkowski, J. M. ^{[1
]}

Kozanecki, A. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

来源：

APPLIED SURFACE SCIENCE | 2017年 / 404卷

关键词：

X-ray diffraction; Zinc oxide; Strain; Mg doping; THIN-FILMS; SUBSTRATE; QUALITY; ZNO;

D O I：

10.1016/j.apsusc.2017.01.218

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Dependence of strain distribution on Mg concentration in MgxZn1-xO layers on a-plane sapphire substrate grown by plasma-assisted molecular beam epitaxy was examined. Accurate determination of lattice parameters was performed using high resolution X-ray diffraction technique. Concentration of Mg was established by Rutherford backscattering spectrometry. These results show the non-linear relationship between the lattice parameters and Mg concentration. We observe the gradual gain of strain with the increase of Mg content in MgxZn1-xO layers, in particular in c-direction. Besides epitaxial layers on a-plane sapphire are biaxially strained similar to layers on c-plane sapphire. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：28 / 33

页数：6

共 33 条

[1] ELASTIC MODULI OF SINGLE-CRYSTAL ZINC OXIDE [J].

BATEMAN, TB .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3309-&

[2] X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals [J].

Borowski, J ;

Gronkowski, J ;

Zielinska-Rohozinska, E ;

Slupinski, T .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (15) :1883-1887

[3]

Chu W.K., 1978, Backscattering Spectrometry, DOI DOI 10.1016/B978-0-12-173850-1.50008-9

[4]

Ding P, 2013, APPL PHYS A-MATER, V112, P1051, DOI 10.1007/s00339-012-7485-2

[5] High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film [J].

Fan, M. M. ;

Liu, K. W. ;

Zhang, Z. Z. ;

Li, B. H. ;

Chen, X. ;

Zhao, D. X. ;

Shan, C. X. ;

Shen, D. Z. .

APPLIED PHYSICS LETTERS, 2014, 105 (01)

[6] Uniaxial locked epitaxy of ZnO on the a face of sapphire [J].

Fons, P ;

Iwata, K ;

Yamada, A ;

Matsubara, K ;

Niki, S ;

Nakahara, K ;

Tanabe, T ;

Takasu, H .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1801-1803

[7] Band gap engineering in Zn(1-x)CdxO and Zn(1-x)MgxO thin films by RF sputtering [J].

Gowrishankar, S. ;

Balakrishnan, L. ;

Gopalakrishnan, N. .

CERAMICS INTERNATIONAL, 2014, 40 (01) :2135-2142

[8] Structural, elastic, and polarization parameters and band structures of wurtzite ZnO and MgO [J].

Jang, S-H ;

Chichibu, S. F. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)

[9] Fabrication and Properties of Amorphous Zinc Oxynitride Thin Films [J].

Kaczmarski, J. ;

Borysiewicz, M. A. ;

Pagowska, K. ;

Kaminska, E. .

ACTA PHYSICA POLONICA A, 2016, 129 (01) :150-152

[10] Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study [J].

Kladko, V. P. ;

Kuchuk, A. V. ;

Safryuk, N. V. ;

Machulin, V. F. ;

Lytvyn, P. M. ;

Raicheva, V. G. ;

Belyaev, A. E. ;

Mazur, Yu I. ;

DeCuir, E. A., Jr. ;

Ware, M. E. ;

Manasreh, M. O. ;

Salamo, G. J. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (02)

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