A study of the back contacts on CdTe/CdS solar cells

被引：64
|
作者：
Bätzner, DL
Wendt, R
Romeo, A
Zogg, H
Tiwari, AN
机构：
[1] ETH Swiss Fed Inst Technol, Inst Quantum Elect, Thin Film Phys Grp, CH-8005 Zurich, Switzerland
[2] ANTEC GmbH, D-65779 Kelkheim, Germany
来源：
THIN SOLID FILMS | 2000年 / 361卷
关键词：
back contacts; solar cells; CdTe; etching;
D O I：
10.1016/S0040-6090(99)00842-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Conventional back contacts on CdTe/CdS solar cells are commonly made with Cu/Au or Cu/graphite. Often the contact limits the solar cells efficiency and the performance degrades because of Cu diffusion to the junction. In order to get stable and 'non-rectifying' back contacts Sb has been applied. Pre-deposition etching treatments, post-deposition annealing, influence of Sb layer thickness and stability issues have been studied. Different etchants not only clean the CdTe surface but they also produce a conducting Te layer on the grain boundaries. Using a mixture of nitric and phosphoric acid and Sb/Au as a back contact. 12.5% efficiency cells are obtained. The stability of solar cells depends on the etching solution. Stability tests under continues I sun illumination suggest that under optimum condition stable cells with Sb/Au contact can be developed. A comparative analysis of the photovoltaic properties of solar cells with different back contacts will be presented. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：463 / 467
页数：5
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