A new compact model for bipolar RRAMs based on truncated-cone conductive filaments-a Verilog-A approach

被引：45

作者：

Gonzalez-Cordero, G. ^{[1
]}

Roldan, J. B. ^{[1
]}

Jimenez-Molinos, F. ^{[1
]}

Sune, J. ^{[2
]}

Long, S. ^{[3
]}

Liu, M. ^{[3
]}

机构：

[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, Avd Fuentenueva S-N, E-18071 Granada, Spain

[2] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain

[3] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 11期

关键词：

resistive RAM; compact model; Verilog-A; circuit simulation; RESISTIVE-SWITCHING MEMORY; THERMAL DISSOLUTION MODEL; RESET TRANSITIONS; MECHANISMS;

D O I：

10.1088/0268-1242/31/11/115013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model for bipolar resistive random-access memories (RRAMs) is presented in this article. Redox and diffusion processes are used to describe in detail the physics behind the filamentary resistive switching (RS) mechanisms of the RRAMs under study. The model includes truncated-cone shaped filaments which are known to be close to the real conductive filament (CF) geometry and a detailed thermal approach, where two temperatures are considered to describe the rupture process at the CF's narrowest part and also the main CF body's electrical conductivity variations. Ti/ZrO2/Pt RRAM devices have been fabricated and measured, and the model has allowed us to reproduce the experimental data for all the cases analyzed. Finally, the model has been implemented in Verilog-A code within the ADS circuit simulator, and the response of a device to pulsed external voltages within a characterization circuit has been simulated, producing good results when compared with experimental measurements.

引用

页数：13

共 38 条

[11] A SPICE Compact Model for Unipolar RRAM Reset Process Analysis [J].

Jimenez-Molinos, Francisco ;

Villena, Marco A. ;

Roldan, Juan B. ;

Roldan, Andres M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (03) :955-962

[12] Programming characteristics of phase change random access memory using phase change simulations [J].

Kim, YT ;

Hwang, YN ;

Lee, KH ;

Lee, SH ;

Jeong, CW ;

Ahn, SJ ;

Yeung, F ;

Koh, GH ;

Jeong, HS ;

Chung, WY ;

Kim, TK ;

Park, YK ;

Kim, KN ;

Kong, JT .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B) :2701-2705

[13]

Kwon DH, 2010, NAT NANOTECHNOL, V5, P148, DOI [10.1038/NNANO.2009.456, 10.1038/nnano.2009.456]

[14] A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope [J].

Lanza, Mario .

MATERIALS, 2014, 7 (03) :2155-2182

[15] Resistive switching phenomena: A review of statistical physics approaches [J].

Lee, Jae Sung ;

Lee, Shinbuhm ;

Noh, Tae Won .

APPLIED PHYSICS REVIEWS, 2015, 2 (03)

[16] Simulation of multilevel switching in electrochemical metallization memory cells [J].

Menzel, Stephan ;

Boettger, Ulrich ;

Waser, Rainer .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (01)

[17]

Oldham KB, 2012, ELECTROCHEMICAL SCIENCE AND TECHNOLOGY: FUNDAMENTALS AND APPLICATIONS, P1

[18] Recent progress in resistive random access memories: Materials, switching mechanisms, and performance [J].

Pan, F. ;

Gao, S. ;

Chen, C. ;

Song, C. ;

Zeng, F. .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2014, 83 :1-59

[19] Improved Switching Variability and Stability by Activating a Single Conductive Filament [J].

Park, Jubong ;

Jung, Seungjae ;

Lee, Wootae ;

Kim, Seonghyun ;

Shin, Jungho ;

Lee, Daeseok ;

Woo, Jiyong ;

Hwang, Hyunsang .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (05) :646-648

[20] Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors [J].

Picos, Rodrigo ;

Roldan, Juan Bautista ;

Al Chawa, Mohamed Moner ;

Garcia-Fernandez, Pedro ;

Jimenez-Molinos, Francisco ;

Garcia-Moreno, Eugeni .

RADIOENGINEERING, 2015, 24 (02) :420-424

← 1 2 3 4 →