A 60 GHz Low Phase Variation Variable Gain Amplifier in 65 nm CMOS

被引：50

作者：

Siao, Di-Sheng ^{[1
,2
]}

Kao, Jui-Chih ^{[1
,2
]}

Wang, Huei ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2014年 / 24卷 / 07期

关键词：

Broadband amplifiers; CMOS amplifiers; millimeter-wave; variable gain amplifiers (VGAs);

D O I：

10.1109/LMWC.2014.2316253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a 57-66 GHz low phase variation variable gain amplifier (VGA) in standard RF 65 nm CMOS process with a chip area of 0.25 mm(2). The phase compensation is achieved by using the different trends of phase between current-steering and splitting-cascade topologies. This VGA achieves the phase variation lower than 7 degrees with 33 dB gain control range (GCR). The 3 dB bandwidth is from 50 to 70 GHz with 21 dB peak gain.

引用

页码：457 / 459

页数：3

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