Optical and Electrical Properties of TiO2/Co/TiO2 Multilayer Films Grown by DC Magnetron Sputtering

被引：4

作者：

Valluzzi, Marcos G. ^{[1
]}

Valluzzi, Lucas G. ^{[1
]}

Meyer, Marcos ^{[2
]}

Hernandez-Fenollosa, Maria A. ^{[3
]}

Damonte, Laura C. ^{[2
]}

机构：

[1] UNTDF, IDEI, RA-9410 Ushuaia, Argentina

[2] UNLP, Dto Fis, Fac Ciencias Exactas, IFLP,CCT,CONICET, RA-1900 La Plata, Buenos Aires, Argentina

[3] Univ Politecn Valencia, Inst Tecnol Mat, Camino Vera S-N, E-46022 Valencia, Spain

来源：

ADVANCES IN CONDENSED MATTER PHYSICS | 2018年 / 2018卷

关键词：

PROBE FORCE MICROSCOPY; TRANSPARENT CONDUCTING OXIDES; WORK FUNCTION; TIO2; SENSOR; GAS; GLASS;

D O I：

10.1155/2018/1257543

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transparent oxide multilayer films of TiO2/Co/TiO2 were grown on glass substrate by DC magnetron sputtering technique. The optical and electrical properties of these films were analyzed with the aim of substituting ITO substrate in optoelectronic devices. The samples were characterized by UV-visible spectroscopy, atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). The effect of Co interlayer thickness (4, 8, and 12 nm) on the transmittance spectra yielded an optical absorption edge shift. The work function of these films was determined by KPFM technique allowing us to predict the Fermi level shift by extending the model for pure materials to our multilayer system. The Fermi level and optical absorption edge seem to be correlated and shifted toward lower energies when Co interlayer thickness is increased.

引用

页数：8

共 58 条

[1]

Abdullah Al Asad Md., 2015, J APPL PHYS, V7, P64

[2]

Albertin K., 2007, J. Int. Cir. Syst, P89

[3] Surface potential of n- and p-type GaN measured by Kelvin force microscopy [J].