High-frequency acoustic charge transport in GaAs nanowires

被引：75

作者：

Buyukkose, S. ^{[1
]}

Hernandez-Minguez, A. ^{[2
]}

Vratzov, B. ^{[3
]}

Somaschini, C. ^{[2
]}

Geelhaar, L. ^{[2
]}

Riechert, H. ^{[2
]}

van der Wiel, W. G. ^{[1
]}

Santos, P. V. ^{[2
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NanoElect Grp, NL-7500 AE Enschede, Netherlands

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[3] NT&D Nanotechnol & Devices, D-52062 Aachen, Germany

来源：

NANOTECHNOLOGY | 2014年 / 25卷 / 13期

关键词：

acoustic charge transport; surface acoustic waves; GaAs nanowire; QUANTUM DOTS; PHOTONICS;

D O I：

10.1088/0957-4484/25/13/135204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.

引用

页数：6

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