Low-voltage, high-performance n-channel organic thin-film transistors based on tantalum pentoxide insulator modified by polar polymers

被引：33
作者：
Lan, Linfeng [1 ]
Peng, Junbiao [1 ]
Sun, Mingliang [1 ]
Zhou, Jianlin [1 ]
Zou, Jianhua [1 ]
Wang, Jian [1 ]
Cao, Yong [1 ]
机构：
[1] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Key Lab Special Funct Mat, Guangzhou 510640, Peoples R China
来源：
ORGANIC ELECTRONICS | 2009年 / 10卷 / 02期
基金：
中国国家自然科学基金; 芬兰科学院;
关键词：
Organic transistor; n-Channel; Polar polymer modification; FIELD-EFFECT TRANSISTORS; INTEGRATED-CIRCUITS; HIGH-EFFICIENCY; GATE INSULATOR; METAL; MONOLAYERS; DEVICES; CATHODE; TA2O5;
D O I：
10.1016/j.orgel.2008.12.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polar polymers (polyfluorene copolymers, PFN-PBT) with different polarities are utilized to modify the surface of tantalum pentoxide (Ta2O5) insulator in n-channel organic thin-film transistors (OTFTs). A high mobility of 0.55 cm(2)/Vs, high on/off current ratio of 1.7 x 10(5), and low threshold voltage of 2.8 V are attained for the OTFT with the modification polymers, the performances of which are much better than those of OTFT with only Ta2O5 insulator. The performances of the OTFT with only Ta2O5 insulator are only 0.006 cm(2)/Vs in mobility, 5 x 10(3) in on/off ratio, and 12.5 V in threshold voltage. Furthermore, it is found that the threshold voltage of the OTFTs with PFN-PBT modification layer is easily tuned by polarities of the polymers. Further studies show that self-assembly dipole moments in the polymers play an important role in the improvement of the OTFT performances. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：346 / 351
页数：6
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