Double atomic layers of graphene/monolayer h-BN on Ni(111) studied by scanning tunneling microscopy and scanning tunneling spectroscopy

被引:43
|
作者
Kawasaki, T
Ichimura, T
Kishimoto, H
Akbar, AA
Ogawa, T
Oshima, C
机构
[1] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 169, Japan
[2] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
关键词
graphene; h-BN; STM; STS; Ni(111);
D O I
10.1142/S0218625X02003883
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using STM, we have directly confirmed the incommensurate stacking of double atomic layers of graphene and monolayer h-BN on Ni(111). The formation of a graphene layer weakens the interfacial interaction between monolayer h-BN and Ni(111), resulting in insulating h-BN layers, while a pristine monolayer h-BN on Ni(111) is metallic. The STS spectra of the double atomic layers showed a tunneling character with a band gap of 0.5 eV.
引用
收藏
页码:1459 / 1464
页数:6
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