Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires

被引：447
作者：
Lyu, SC
Zhang, Y
Ruh, H
Lee, HJ
Shim, HW
Suh, EK
Lee, CJ
机构：
[1] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea
[2] Korea Res Inst Stand & Sci, Microstruct Anal Lab, Taejon 305600, South Korea
[3] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561856, South Korea
[4] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561856, South Korea
来源：
CHEMICAL PHYSICS LETTERS | 2002年 / 363卷 / 1-2期
关键词：
D O I：
10.1016/S0009-2614(02)01145-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Well-aligned single-crystalline zinc oxide (ZnO) nanowires with high density were successfully synthesized on nickel monoxide (NiO) catalyzed alumina substrate through a simple metal-vapor deposition method at an extremely low temperature (450degreesC). The single-crystalline ZnO nanowires had a hexagonal wurzite structure and diameters of about 55 mn, and lengths up to 2.6 mum. The photoluminescence spectra under excitation 325 urn showed a ultra-violet (UV) emission at 3.26 eV and a green emission at 2.44 eV. The UV emission and green emission bands were attributed to near band-edge transition and radial combination of a singly ionized oxygen vacancy with a photo-induced hole, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：134 / 138
页数：5
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