High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation

被引：4

作者：

Negoro, Y ^{[1
]}

Miyamoto, N ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

avalanche breakdown; ion implantation; pn diodes;

D O I：

10.4028/www.scientific.net/MSF.389-393.1273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum ion (Al+) and boron ion (B+) implantation into 4H-SiC and the characteristics of implanted pn junctions have been investigated. Three groups of diodes with planar structures were fabricated by employing Al+ and B+ implantation. A SiC pn diode fabricated by shallow Al+ and deep B+ implantations has exhibited a high breakdown voltage of 2900 V with a low on-resistance of 8.0 mOmegacm(2) at room temperature. The diodes fabricated in this study showed a positive temperature coefficient of breakdown voltage.

引用

页码：1273 / 1276

页数：4

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