Morphology alterations during postsynthesis oxidation of Zn nanowires

被引:7
作者
Schroeder, P. [1 ]
Kast, M. [1 ]
Halwax, E. [2 ]
Edtmaier, C. [2 ]
Bethge, O. [3 ]
Brueckl, H. [1 ]
机构
[1] Austrian Res Ctr GmbH ARC, Div Nano Syst Technol, A-1220 Vienna, Austria
[2] Vienna Univ Technol, Inst Chem Technol & Analyt, A-1060 Vienna, Austria
[3] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria
关键词
grain growth; II-VI semiconductors; nanofabrication; nanowires; oxidation; scanning electron microscopy; solid-state phase transformations; wide band gap semiconductors; X-ray diffraction; zinc; zinc compounds; ZINC-OXIDE NANOWIRES; FABRICATION; SUBSTRATE;
D O I
10.1063/1.3126519
中图分类号
O59 [应用物理学];
学科分类号
摘要
Zinc metal nanowires have been oxidized at temperatures of 200-500 degrees C in ambient air in order to obtain ZnO nanowires. X-ray diffraction investigations reveal a complete transformation from Zn to ZnO at a temperature of >= 300 degrees C within 30 min. Temperature-induced grain growth attains saturation at about 350 degrees C. Scanning electron microscopy studies show a pronounced morphology change from smooth, unidirectional to rough, bursted nanorods at a temperature of >250 degrees C. The corresponding transformation mechanism is discussed.
引用
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页数:5
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