Effect of strain on atomic-scale friction in layered MoS2

被引：37

作者：

Wang, Changqing ^{[1
,2
,3
]}

Li, Haisheng ^{[4
]}

Zhang, Yongsheng ^{[3
]}

Sun, Qiang ^{[1
,2
]}

Jia, Yu ^{[1
,2
]}

机构：

[1] Zhengzhou Univ, Sch Phys & Engn, Int Joint Res Lab Quantum Funct Mat Henan, Zhengzhou 450001, Henan, Peoples R China

[2] Zhengzhou Univ, Ctr Clean Energy & Quantum Struct, Zhengzhou 450001, Henan, Peoples R China

[3] Luoyang Inst Sci & Technol, Dept Math & Phys, Luoyang 471023, Peoples R China

[4] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471023, Peoples R China

来源：

TRIBOLOGY INTERNATIONAL | 2014年 / 77卷

关键词：

First-principles; Friction; MoS2; Strain; AB-INITIO; METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; TRANSITION;

D O I：

10.1016/j.triboint.2014.02.013

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

The atomic-scale friction in MoS2 is investigated employing the density functional theory calculation including the dispersion correction (DFT-D). Energy corrugations and lateral frictional forces of the lamellar MoS2 are derived, suggesting that the in-plane compressive MoS2 exhibits lower friction than the tensile system. The reduced friction is attributed to a stronger coulombic repulsive interaction enabled by the transferred charge to the sliding interface. In-depth understanding of the relationship between friction and interfacial interaction shows that friction can be tuned in layered MoS2 by applying an in-plane strain to the sliding interface. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：211 / 217

页数：7

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