Effect of strain on atomic-scale friction in layered MoS2

被引：37
|
作者：
Wang, Changqing [1 ,2 ,3 ]
Li, Haisheng [4 ]
Zhang, Yongsheng [3 ]
Sun, Qiang [1 ,2 ]
Jia, Yu [1 ,2 ]
机构：
[1] Zhengzhou Univ, Sch Phys & Engn, Int Joint Res Lab Quantum Funct Mat Henan, Zhengzhou 450001, Henan, Peoples R China
[2] Zhengzhou Univ, Ctr Clean Energy & Quantum Struct, Zhengzhou 450001, Henan, Peoples R China
[3] Luoyang Inst Sci & Technol, Dept Math & Phys, Luoyang 471023, Peoples R China
[4] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471023, Peoples R China
来源：
TRIBOLOGY INTERNATIONAL | 2014年 / 77卷
关键词：
First-principles; Friction; MoS2; Strain; AB-INITIO; METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; TRANSITION;
D O I：
10.1016/j.triboint.2014.02.013
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
The atomic-scale friction in MoS2 is investigated employing the density functional theory calculation including the dispersion correction (DFT-D). Energy corrugations and lateral frictional forces of the lamellar MoS2 are derived, suggesting that the in-plane compressive MoS2 exhibits lower friction than the tensile system. The reduced friction is attributed to a stronger coulombic repulsive interaction enabled by the transferred charge to the sliding interface. In-depth understanding of the relationship between friction and interfacial interaction shows that friction can be tuned in layered MoS2 by applying an in-plane strain to the sliding interface. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：211 / 217
页数：7
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