Effect of strain on atomic-scale friction in layered MoS2

被引：37
|
作者：
Wang, Changqing [1 ,2 ,3 ]
Li, Haisheng [4 ]
Zhang, Yongsheng [3 ]
Sun, Qiang [1 ,2 ]
Jia, Yu [1 ,2 ]
机构：
[1] Zhengzhou Univ, Sch Phys & Engn, Int Joint Res Lab Quantum Funct Mat Henan, Zhengzhou 450001, Henan, Peoples R China
[2] Zhengzhou Univ, Ctr Clean Energy & Quantum Struct, Zhengzhou 450001, Henan, Peoples R China
[3] Luoyang Inst Sci & Technol, Dept Math & Phys, Luoyang 471023, Peoples R China
[4] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471023, Peoples R China
来源：
TRIBOLOGY INTERNATIONAL | 2014年 / 77卷
关键词：
First-principles; Friction; MoS2; Strain; AB-INITIO; METAL DICHALCOGENIDES; ELECTRONIC-PROPERTIES; TRANSITION;
D O I：
10.1016/j.triboint.2014.02.013
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
The atomic-scale friction in MoS2 is investigated employing the density functional theory calculation including the dispersion correction (DFT-D). Energy corrugations and lateral frictional forces of the lamellar MoS2 are derived, suggesting that the in-plane compressive MoS2 exhibits lower friction than the tensile system. The reduced friction is attributed to a stronger coulombic repulsive interaction enabled by the transferred charge to the sliding interface. In-depth understanding of the relationship between friction and interfacial interaction shows that friction can be tuned in layered MoS2 by applying an in-plane strain to the sliding interface. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：211 / 217
页数：7
相关论文
共 50 条
  • [1] The Effects of Atomic-Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2
    Trainer, Daniel J.
    Zhang, Yuan
    Bobba, Fabrizio
    Xi, Xiaoxing
    Hla, Saw-Wai
    Iavarone, Maria
    ACS NANO, 2019, 13 (07) : 8284 - 8291
  • [2] Atomic-Scale Spectroscopy of Gated Monolayer MoS2
    Zhou, Xiaodong
    Kang, Kibum
    Xie, Saien
    Dadgar, Ali
    Monahan, Nicholas R.
    Zhu, X. -Y.
    Park, Jiwoong
    Pasupathy, Abhay N.
    NANO LETTERS, 2016, 16 (05) : 3148 - 3154
  • [3] Experimental study and modeling of atomic-scale friction in zigzag and armchair lattice orientations of MoS2
    Li, Meng
    Shi, Jialin
    Liu, Lianqing
    Yu, Peng
    Xi, Ning
    Wang, Yuechao
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) : 189 - 199
  • [4] Atomic-Scale Dynamic Mechanisms of Embedded MoS2 Wires
    Ryu, Gyeong Hee
    Jung, Gang Seob
    Warner, Jamie H.
    ACS NANO, 2024, 18 (48) : 33152 - 33158
  • [5] Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer
    Marion, Ida Delac
    Capeta, Davor
    Pielic, Borna
    Faraguna, Fabio
    Gallardo, Aurelio
    Pou, Pablo
    Biel, Blanca
    Vujicic, Natasa
    Kralj, Marko
    NANOTECHNOLOGY, 2018, 29 (30) : 305703
  • [6] Effects of vdW Interaction and Electric Field on Friction in MoS2
    Wang, Changqing
    Chen, Weiguang
    Zhang, Yongsheng
    Sun, Qiang
    Jia, Yu
    TRIBOLOGY LETTERS, 2015, 59 (01)
  • [7] Atomic-scale friction of MoS2/Fe and MoO3/Fe interfaces: A first-principles investigation
    Zhang, Qiangqiang
    Shi, Zhijun
    Li, Chuan
    Liu, Sha
    Hu, Xianguo
    TRIBOLOGY INTERNATIONAL, 2023, 186
  • [8] Atomic scale study for the structural transformation of single layered MoS2
    Dahanayake, Damayanthi
    Gunasekara, Sunanda
    Jayaweera, Vimukthi
    Sandaruwan, Chanaka
    Karunarathne, Veranja
    Amaratunga, Gehan A. J.
    CRYSTENGCOMM, 2018, 20 (41) : 6482 - 6489
  • [9] Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS2 Films
    Bayer, Bernhard C.
    Kaindl, Reinhard
    Monazam, Mohammad Reza Ahmadpour
    Susi, Toma
    Kotakoski, Jani
    Gupta, Tushar
    Eder, Dominik
    Waldhauser, Wolfgang
    Meyer, Jannik C.
    ACS NANO, 2018, 12 (08) : 8758 - 8769
  • [10] Atomic Scale Simulation on the Anti-Pressure and Friction Reduction Mechanisms of MoS2 Monolayer
    Liu, Yang
    Liu, Yuhong
    Ma, Tianbao
    Luo, Jianbin
    MATERIALS, 2018, 11 (05)
12345