Ge films on Au(111) and Al(111): thermal stability

被引：2

作者：

Martinez, E. ^{[1
]}

Cantero, E. D. ^{[2
,3
]}

Fuhr, J. D. ^{[2
,3
]}

Martiarena, M. L. ^{[2
,3
]}

Grizzi, O. ^{[2
,3
]}

Sanchez, E. A. ^{[2
,3
]}

机构：

[1] Univ Nac Cuyo, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[2] Consejo Nacl Invest Cient & Tecn, Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[3] CNEA, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

来源：

MATERIALS TODAY-PROCEEDINGS | 2019年 / 14卷

关键词：

germanene; segregation; desorption; Au(111); Al(111); LEED; TOF-DRS; GERMANENE; LAYER;

D O I：

10.1016/j.matpr.2019.05.073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an analysis of Ge films grown on Au(111) and Al(111) under UHV conditions, including studies on the desorption and segregation of Ge. For desorption of a multilayer Ge/Au film, a two-step process was observed with a smooth transition in the 500-770 K range. For the case of Ge/Al a sharp desorption process takes place at similar to 500 K. The final products at the surface are also different; no Ge was found after annealing the Ge/Al sample, while some Ge (of the order of 10% of ML) was found after annealing the Ge/Au sample; attributed to segregation from the bulk. (C) 2019 Elsevier Ltd. All rights reserved.

引用

页码：148 / 151

页数：4

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