Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

被引：27

作者：

Choi, Won Hyuck ^{[1
]}

You, Guanjun ^{[2
]}

Abraham, Michael ^{[1
]}

Yu, Shih-Ying ^{[1
]}

Liu, Jie ^{[2
]}

Wang, Li ^{[2
]}

Xu, Jian ^{[2
]}

Mohney, Suzanne E. ^{[1
,3
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA

[3] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 01期

基金：

美国国家科学基金会;

关键词：

OPTICAL CHARACTERIZATION; GAN; ARRAYS; PERFORMANCE; FABRICATION; DAMAGE;

D O I：

10.1063/1.4885455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy. (C) 2014 AIP Publishing LLC.

引用

页数：6

共 22 条

[1] Size-controlled InGaN/GaN nanorod array fabrication and optical characterization [J].

Bae, Si-Young ;

Kong, Duk-Jo ;

Lee, Jun-Yeob ;

Seo, Dong-Ju ;

Lee, Dong-Seon .

OPTICS EXPRESS, 2013, 21 (14) :16854-16862

[2] Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes [J].

Bai, J. ;

Wang, Q. ;

Wang, T. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (03) :477-480

[3] Solvent effect on the properties of sulfur passivated GaAs [J].

Bessolov, VN ;

Konenkova, EV ;

Lebedev, MV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04) :2761-2766

[4] Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays [J].

Chen, Liang-Yi ;

Huang, Hung-Hsun ;

Chang, Chun-Hsiang ;

Huang, Ying-Yuan ;

Wu, Yuh-Renn ;

Huang, JianJang .

OPTICS EXPRESS, 2011, 19 (14) :A900-A907

[5] High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes [J].

Chen, Liang-Yi ;

Huang, Ying-Yuan ;

Chang, Chun-Hsiang ;

Sun, Yu-Hsuan ;

Cheng, Yun-Wei ;

Ke, Min-Yung ;

Chen, Cheng-Pin ;

Huang, JianJang .

OPTICS EXPRESS, 2010, 18 (08) :7664-7669

[6] Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands [J].

Chiu, C. H. ;

Lu, T. C. ;

Huang, H. W. ;

Lai, C. F. ;

Kao, C. C. ;

Chu, J. T. ;

Yu, C. C. ;

Kuo, H. C. ;

Wang, S. C. ;

Lin, C. F. ;

Hsueh, T. H. .

NANOTECHNOLOGY, 2007, 18 (44)

[7] Nano-processing techniques applied in GaN-Based light-emitting devices with self-assembly Ni nano-masks [J].

Chiu, Ching-Hua ;

Lo, Ming-Hua ;

Lu, Tien-Chang ;

Yu, Peichen ;

Huang, H. W. ;

Kuo, Hao-Chung ;

Wang, Shing-Chung .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (9-12) :1445-1454

[8] Plasma-induced damage to n-type GaN [J].

Choi, HW ;

Chua, SJ ;

Raman, A ;

Pan, JS ;

Wee, ATS .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1795-1797

[9] Quantum confined Stark effect and corresponding lifetime reduction in a single InxGa1-xN quantum disk [J].

Holmes, Mark J. ;

Park, Young S. ;

Warner, Jamie H. ;

Taylor, Robert A. .

APPLIED PHYSICS LETTERS, 2009, 95 (18)

[10] InGaN-GaN nanorod light emitting arrays fabricated by silica nanomasks [J].

Hsieh, Min-Yann ;

Wang, Cheng-Yin ;

Chen, Liang-Yi ;

Ke, Min-Yung ;

Huang, JianJang .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (5-6) :468-472

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