Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

被引：132
作者：
Oka, Keisuke
Yanagida, Takeshi [1 ]
Nagashima, Kazuki
Tanaka, Hidekazu
Kawai, Tomoji
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 10期
关键词：
HIGH-DENSITY; RESISTANCE; CARBON; FILMS;
D O I：
10.1021/ja8089922
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscate mechanisms in NiO resistive memory switching but also next-generation nanoscate nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.
引用
收藏
页码：3434 / +
页数：3
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