Synthesis and Photoluminescence Properties of GaAs Nanowires Grown on Fused Quartz Substrates

被引：1

作者：

Zhao Yu-Feng ^{[1
]}

Li Xin-Hua ^{[1
]}

Shi Tong-Fei ^{[1
]}

Wang Wen-Bo ^{[1
]}

Zhou Bu-Kang ^{[1
]}

Duan Hua-Hua ^{[1
]}

Zeng Xue-Song ^{[1
]}

Li Ning ^{[1
]}

Wang Yu-Qi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 05期

关键词：

TEMPERATURE-DEPENDENCE; DEFECTS; CRYSTAL;

D O I：

10.1088/0256-307X/31/5/056101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaAs nanowires are synthesized on fused quartz substrates by using molecular beam epitaxy via a vapor-liquidsolid mechanism with gold as the catalyst. High resolution-transmission electron microscopy is used to probe crystal quality and growth direction. Micro-photoluminescence measurements are carried out to examine the optical properties of GaAs NWs. The low-temperature photoluminescence (PL) emission of nanowires (NWs) has a peak at 1.513 eV, 2 meV lower than the zinc blende GaAs free exciton energy. The temperature-dependent band gap of NWs is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 150 K, with an activation energy of 6.3 meV reflecting the presence of the longitudinal twins' structure.

引用

页数：4

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