Synthesis and Photoluminescence Properties of GaAs Nanowires Grown on Fused Quartz Substrates

被引：1
|
作者：
Zhao Yu-Feng [1 ]
Li Xin-Hua [1 ]
Shi Tong-Fei [1 ]
Wang Wen-Bo [1 ]
Zhou Bu-Kang [1 ]
Duan Hua-Hua [1 ]
Zeng Xue-Song [1 ]
Li Ning [1 ]
Wang Yu-Qi [1 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 05期
关键词：
TEMPERATURE-DEPENDENCE; DEFECTS; CRYSTAL;
D O I：
10.1088/0256-307X/31/5/056101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
GaAs nanowires are synthesized on fused quartz substrates by using molecular beam epitaxy via a vapor-liquidsolid mechanism with gold as the catalyst. High resolution-transmission electron microscopy is used to probe crystal quality and growth direction. Micro-photoluminescence measurements are carried out to examine the optical properties of GaAs NWs. The low-temperature photoluminescence (PL) emission of nanowires (NWs) has a peak at 1.513 eV, 2 meV lower than the zinc blende GaAs free exciton energy. The temperature-dependent band gap of NWs is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 150 K, with an activation energy of 6.3 meV reflecting the presence of the longitudinal twins' structure.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Convex-like GaAs nanowires grown on Si (111) substrates
    Arpapay, Burcu
    Serincan, Ugur
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 107
  • [32] ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy
    Janik, E.
    Sadowski, J.
    Dluzewski, P.
    Kret, S.
    Baczewski, L. T.
    Petroutchik, A.
    Lusakowska, E.
    Wrobel, J.
    Zaleszczyk, W.
    Karczewski, G.
    Wojtowicz, T.
    Presz, A.
    APPLIED PHYSICS LETTERS, 2006, 89 (13)
  • [33] Structure, magnetic, and magneto-optical properties of MnBi films grown on quartz and (001) GaAs substrates
    Harder, KU
    Menzel, D
    Widmer, T
    Schoenes, J
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3625 - 3629
  • [34] Novel growth and properties of GaAs nanowires on Si substrates
    Kang, J. H.
    Gao, Q.
    Joyce, H. J.
    Tan, H. H.
    Jagadish, C.
    Kim, Y.
    Choi, D. Y.
    Guo, Y.
    Xu, H.
    Zou, J.
    Fickenscher, M. A.
    Smith, L. M.
    Jackson, H. E.
    Yarrison-Rice, J. M.
    NANOTECHNOLOGY, 2010, 21 (03)
  • [35] Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy
    Martelli, F.
    Piccin, M.
    Bais, G.
    Jabeen, F.
    Ambrosini, S.
    Rubini, S.
    Franciosi, A.
    NANOTECHNOLOGY, 2007, 18 (12)
  • [36] Structural and Chemical Properties of ZnTe Nanowires Grown on GaAs
    Kirmse, H.
    Neumann, W.
    Kret, S.
    Dluzewski, P.
    Janik, E.
    Karczewski, G.
    Wojtowicz, T.
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 233 - +
  • [37] Effects of Ar Plasma Treatment on Photoluminescence Properties of GaAs Nanowires
    Gao Mei
    Li Haolin
    Wang Dengkui
    Wang Xinwei
    Fang Xuan
    Fang Dan
    Tang Jilong
    Wang Xiaohua
    Wei Zhipeng
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2019, 46 (02):
  • [38] Photoluminescence from ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates
    Mashita, M
    Numata, T
    Nakazawa, H
    Kajikawa, Y
    Koo, BH
    Makino, H
    Yao, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (7B): : L807 - L809
  • [39] Effects of Ar Plasma Treatment on Photoluminescence Properties of GaAs Nanowires
    Gao M.
    Li H.
    Wang D.
    Wang X.
    Fang X.
    Fang D.
    Tang J.
    Wang X.
    Wei Z.
    Zhongguo Jiguang/Chinese Journal of Lasers, 2019, 46 (02):
  • [40] Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates
    Falcao, B. P.
    Leitao, J. P.
    Correia, M. R.
    Soares, M. R.
    Morales, F. M.
    Manuel, J. M.
    Garcia, R.
    Gustafsson, A.
    Moreira, M. V. B.
    de Oliveira, A. G.
    Gonzalez, J. C.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
12345