Work function investigations of Al-doped ZnO for band-alignment in electronic and optoelectronic applications

被引:47
作者
Drewelow, Grant [2 ]
Reed, Austin [2 ]
Stone, Chandon [2 ]
Roh, Kwangdong [3 ]
Jiang, Zhong-Tao [4 ]
Linh Nguyen Thi Truc [5 ]
No, Kwangsoo [6 ]
Parkg, Hongsik [7 ]
Lee, Sunghwan [1 ,2 ]
机构
[1] Purdue Univ, Sch Engn Technol, W Lafayette, IN 47907 USA
[2] Baylor Univ, Dept Mech Engn, Waco, TX 76798 USA
[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[4] Murdoch Univ, Sch Engn & Informat Technol, Murdoch, WA 6150, Australia
[5] Ho Chi Minh City Univ Educ, Dept Chem, Ho Chi Minh City 70250, Vietnam
[6] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea
[7] Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea
关键词
ZnO; Al-doped ZnO (AZO); Work function; Fermi energy level; Band alignment; X-ray photoelectron spectroscopy; INDIUM TIN OXIDE; THIN-FILMS; OPTICAL-PROPERTIES; SURFACE-ROUGHNESS; TEMPERATURE; XPS; SPECTROSCOPY; DEPOSITION; CONTACT; ANODES;
D O I
10.1016/j.apsusc.2019.04.079
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Possessing the ability to tune the work function and band gap of transparent conducting oxides (TCOs) is widely sought after, as it allows for improved band alignment in electronic and optoelectronic applications, enhancing overall device performance. Out of the many TCOs, Al-doped zinc oxide (AZO) has received considerable interest for electrode application due to its low electrical resistivity, high optical transparency in the visible regime, and room-temperature fabrication capability. In this study, we report on the effects of post fabrication air-annealing on the work function and band alignment of AZO deposited at room temperature by DC-magnetron sputtering. AZO films were air-annealed at temperatures varying from 25 degrees C (as-deposited) to 600 degrees C. The Fermi energy levels, work function values, surface chemistry, and optical band gaps of the AZO films were investigated via Xray photoelectron spectroscopy (XPS) and UV-Vis spectroscopy. An increase of the work function from similar to 5.53 eV to similar to 6.05 eV is observed to take place over an increase of annealing temperatures from 25 degrees C (as-deposited) to 600 degrees C, determined to be the result of a decrease in carrier concentration through the promoted extinction of oxygen vacancies. Via XPS analysis, the increased extinction of oxygen vacancies was confirmed due to a notable shift from an oxygen-deficient state to an oxygen-sufficient state in the high resolution O 1s peaks, for which the activation energy was found to be 33.3 meV. Over the course of increasing annealing temperatures, the optical band gap saw a shift from similar to 3.55 eV to similar to 3.37 eV, following the Burstein-Moss phenomenon due to a decrease in carrier concentration, further verifying an increase in oxygen vacancy extinction. The reported results confirm that work function tuning of AZO films can be achieved through simple post-fabrication air-annealing.
引用
收藏
页码:990 / 998
页数:9
相关论文
共 75 条
[1]   Interface-limited injection in amorphous organic semiconductors [J].
Baldo, MA ;
Forrest, SR .
PHYSICAL REVIEW B, 2001, 64 (08)
[2]  
Brundle C. R., 1978, ELECT SPECTROSCOPY T
[3]   Electro-sensing base for mefenamic acid on a 5% barium-doped zinc oxide nanoparticle modified electrode and its analytical application [J].
Bukkitgar, S. D. ;
Shetti, N. P. ;
Kulkarni, R. M. ;
Nandibewoor, S. T. .
RSC ADVANCES, 2015, 5 (127) :104891-104899
[4]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[5]   Influence of heat treatment on the nanocrystalline structure of ZnO film deposited on p-Si [J].
Caglar, Yasemin ;
Ilican, Saliha ;
Caglar, Mujdat ;
Yakuphanoglu, Fahrettin ;
Wu, Junshu ;
Gao, Kun ;
Lu, Pai ;
Xue, Dongfeng .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 481 (1-2) :885-889
[6]   MoO3 surface passivation of the transparent anode in organic solar cells using ultrathin films [J].
Cattin, L. ;
Dahou, F. ;
Lare, Y. ;
Morsli, M. ;
Tricot, R. ;
Houari, S. ;
Mokrani, A. ;
Jondo, K. ;
Khelil, A. ;
Napo, K. ;
Bernede, J. C. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (03)
[7]   Studying of transparent conductive ZnO:Al thin films by RF reactive magnetron sputtering [J].
Chang, JF ;
Wang, HL ;
Hon, MH .
JOURNAL OF CRYSTAL GROWTH, 2000, 211 (1-4) :93-97
[8]   X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films [J].
Chen, M ;
Wang, X ;
Yu, YH ;
Pei, ZL ;
Bai, XD ;
Sun, C ;
Huang, RF ;
Wen, LS .
APPLIED SURFACE SCIENCE, 2000, 158 (1-2) :134-140
[9]  
Chen S, 2012, J MATER CHEM, V22, P24202, DOI [10.1039/c2jm33838f, 10.1039/c2m33838f]
[10]   PHOTOCONDUCTION AND SURFACE EFFECTS WITH ZINC OXIDE CRYSTALS [J].
COLLINS, RJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1958, 112 (02) :388-395