Remarks of an Extensive Investigation on the Microwave HEMT Behavior Under Illumination

被引：19

作者：

Caddemi, Alina ^{[1
]}

Crupi, Giovanni ^{[1
]}

Fazio, Enza ^{[2
]}

Patane, Salvatore ^{[2
]}

Salvo, Giuseppe ^{[1
]}

机构：

[1] Univ Messina, DICIEAMA, I-98166 Messina, Italy

[2] Univ Messina, Dipartimento Fis & Sci Terra, I-98166 Messina, Italy

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2014年 / 24卷 / 02期

关键词：

HEMT; microwave measurements; optical effects; radiation wavelength; threshold voltage shift; KINK;

D O I：

10.1109/LMWC.2013.2290220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents valuable remarks based on an extensive experimental study of the microwave behavior for a GaAs HEMT under CW infrared and visible laser exposure. The comparison of both dc and microwave (scattering and noise) parameters with and without illumination has highlighted that the device behavior is significantly affected by the light exposure. The observed optical effects can be ascribed to the threshold voltage shift originating from the internal photovoltaic effect. The light sensitivity has shown to be more pronounced at shorter wavelength.

引用

页码：102 / 104

页数：3

共 18 条

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Anderson V., 2002, PRINCIPLES FRONTAL L, P1

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