Synthesis and Properties of Mn-Doped (Bi0.5Na0.5)TiO3 Thin Films by Chemical Solution Deposition

被引：1

作者：

Makino, Narimichi ^{[1
]}

Lee, Bong-Yeon ^{[2
]}

Moriya, Makoto ^{[1
]}

Sakamoto, Wataru ^{[1
]}

Iijima, Takashi ^{[2
]}

Yogo, Toshinobu ^{[1
]}

机构：

[1] Nagoya Univ, EcoTopia Sci Inst, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

来源：

ELECTROCERAMICS IN JAPAN XVI | 2014年 / 582卷

关键词：

Bi0.5Na0.5TiO3; chemical solution deposition; thin film; ferroelectric properties; FERROELECTRIC CERAMICS; ELECTRICAL-PROPERTIES; CRYSTALS;

D O I：

10.4028/www.scientific.net/KEM.582.59

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lead-free ferroelectric (Bi0.5Na0.5)TiO3 (BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 degrees C on Pt/TiOx/SiO2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P) electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effective d(33) values were estimated to be about 60 pm/V.

引用

页码：59 / +

页数：2

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