High-voltage AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

被引：0

作者：

Akira, K. ^{[1
]}

Asano, T. ^{[1
]}

Tokuda, H. ^{[1
]}

Kuzuhara, M. ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan

来源：

2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013) | 2013年

关键词：

component; free-standing GaN; AlGaN/GaN; HEMT; breakdown voltage;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a free-standing GaN substrate. The three terminal breakdown voltage of the fabricated HEMT with a gate length of 3 mu m exhibited a linear increase with increasing the gate-to-drain distance (L-gd), reaching more than 1200 V at L-gd=25 mu m. It was found that the ON/OFF ratio in the drain current was only 10(4), indicating the need for further improvements in buffer structure design.

引用

页数：2

共 4 条

[1] Over 3.0 GW/cm2 Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates [J].