III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs

被引：85

作者：

Balakrishnan, G. ^{[1
]}

Tatebayashi, J. ^{[1
]}

Khoshakhlagh, A. ^{[1
]}

Huang, S. H. ^{[1
]}

Jallipalli, A. ^{[1
]}

Dawson, L. R. ^{[1
]}

Huffaker, D. L. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2362999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrate and characterize type-II GaSb quantum dot (QD) formation on GaAs by either Stranski-Krastanov (SK) or interfacial misfit (IMF) growth mode. The growth mode selection is controlled by the gallium to antimony (III/V) ratio where a high III/V ratio produces IMF and a low ratio establishes the SK growth mode. The IMF growth mode produces strain-relaxed QDs, where the SK QDs remain highly strained. Both ensembles demonstrate strong room temperature photoluminescence (PL) with the SK QDs emitting at 1180 nm and the IMF QDs emitting at 1375 nm. Quantized energy levels along with a spectral blueshift are observed in 77 K PL. Transmission electron microscope images identify the IMF array and crystallographic shape for both types of QD formation. Atomic force microscope images characterize QD geometry and density. (c) 2006 American Institute of Physics.

引用

页数：3

共 14 条

[1] X-ray scattering, dislocations and orthorhombic GaSb [J].

Babkevich, AY ;

Cowley, RA ;

Mason, NJ ;

Stunault, A .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (22) :4747-4756

[2]

Bennett BR, 1996, APPL PHYS LETT, V68, P958, DOI 10.1063/1.116111

[3] Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures [J].

Glaser, ER ;

Bennett, BR ;

Shanabrook, BV ;

Magno, R .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3614-3616

[4] RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS [J].

HATAMI, F ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BOHRER, J ;

HEINRICHSDORFF, F ;

BEER, M ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J ;

RICHTER, U ;

IVANOV, SV ;

MELTSER, BY ;

KOPEV, PS ;

ALFEROV, ZI .

APPLIED PHYSICS LETTERS, 1995, 67 (05) :656-658

[5]

JALLIPALLI A, 2006, P MAT RES SOC S, V934, P934

[6] Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure [J].

Motlan ;

Goldys, EM .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2976-2978

[7] 2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy [J].

Mourad, C ;

Gianardi, D ;

Malloy, KJ ;

Kaspi, R .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5543-5546

[8]

Rocher A. M., 1991, Diffusion and Defect Data - Solid State Data, Part B (Solid State Phenomena), V19-20, P563

[9] High-power 2.3-μm GaSb-based linear laser array [J].

Shterengas, L ;

Belenky, GL ;

Gourevitch, A ;

Donetsky, D ;

Kim, JG ;

Martinelli, RU ;

Westerfeld, D .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (10) :2218-2220

[10] Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots [J].

Sun, CK ;

Wang, G ;

Bowers, JE ;

Brar, B ;

Blank, HR ;

Kroemer, H ;

Pilkuhn, MH .

APPLIED PHYSICS LETTERS, 1996, 68 (11) :1543-1545

← 1 2 →