GaN avalanche photodiodes

被引：174

作者：

Carrano, JC ^{[1
]}

Lambert, DJH

Eiting, CJ

Collins, CJ

Li, T

Wang, S

Yang, B

Beck, AL

Dupuis, RD

Campbell, JC

机构：

[1] US Mil Acad, Dept Elect Engn & Comp Sci, Photon Res Ctr, W Point, NY 10996 USA

[2] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current-voltage characteristics indicate a multiplication of > 25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is greater than or equal to 3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas. (C) 2000 American Institute of Physics. [S0003-6951(00)01207-9].

引用

页码：924 / 926

页数：3

共 9 条

[1] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110

[2] Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode [J].

Collins, CJ ;

Li, T ;

Beck, AL ;

Dupuis, RD ;

Campbell, JC ;

Carrano, JC ;

Schurman, MJ ;

Ferguson, IA .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2138-2140

[3] Growth of low resistivity p-type GaN by metal organic chemical vapour deposition [J].

Eiting, CJ ;

Grudowski, PA ;

Dupuis, RD .

ELECTRONICS LETTERS, 1997, 33 (23) :1987-1989

[4] Characteristics of Mg-doped GaN grown by metallorganic chemical vapor deposition [J].

Eiting, CJ ;

Grudowski, PA ;

Park, J ;

Lambert, DJH ;

Shelton, BS ;

Dupuis, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) :L219-L221

[5] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

VANHOVE, JM ;

BLASINGAME, M ;

REITZ, LF .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2917-2919

[6] THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].

MCINTYRE, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&

[7] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707

[8] Avalanche breakdown and breakdown luminescence in p-π-n GaN diodes [J].

Osinsky, A ;

Shur, MS ;

Gaska, R ;

Chen, Q .

ELECTRONICS LETTERS, 1998, 34 (07) :691-692

[9]

VERGHESE S, 1999, P 56 IEEE DEV RES C, P54

← 1 →