GaN/AlGaN HBT fabrication

Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of similar to 10 were achieved in 90 mu m emitter diameter devices measured at 300 degrees C. Some of the key processing steps, such as ohmic contact annealing temperature and mesa fabrication by low damage dry etching, are described, together with secondary ion mass spectrometry measurements of the dopant and background impurity profiles. (C) 2000 Elsevier Science Ltd. All rights reserved.