3-T ISFET front-end utilising parasitic device capacitance

被引：8

作者：

Hu, Yuanqi ^{[1
]}

Georgiou, Pantelis ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Inst Biomed Engn, Ctr Bioinspired Technol, London, England

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 21期

关键词：

CIRCUIT;

D O I：

10.1049/el.2014.2488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3-T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain-gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in-pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.

引用

页码：1507 / +

页数：3

共 5 条

[1] Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology [J].