New hollow SiO2 clusters:: Structure, energy and electronic characteristics

被引:4
|
作者
Artyukhov, V. I. [1 ]
Chernozatonskii, L. A. [1 ]
机构
[1] RAS, Inst Biochem Phys, Moscow 119991, Russia
关键词
silica; polyhedral clusters; DFT calculations;
D O I
10.1080/15363830600666670
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Structural, energetic and electronic properties of polyhedral silica clusters are studied using density-functional theory. Topology of polyhedral clusters is considered, and a new type of clusters is proposed. For two topological types of clusters (trigonal and tetragonal), new stable structures have been found. The dependences of bonding energy and HOMO-LUMO gap on the geometry of a cluster are analyzed.
引用
收藏
页码:545 / 550
页数:6
相关论文
共 50 条
  • [31] Electronic energy loss Of H3+ ion clusters in SiO2 films -: art. no. 022904
    Behar, M
    Dias, JF
    Grande, PL
    dos Santos, JRR
    Arista, NR
    PHYSICAL REVIEW A, 2001, 64 (02): : 5
  • [32] Atomic structure of SiO2 at SiO2/Si interfaces
    Hirose, K
    Nohira, H
    Sakano, K
    Hattori, T
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 455 - 459
  • [33] Synthesis and characterization of double-shell structure hollow SiO2 nanospheres
    Li, Fangxian
    Wang, Yasong
    Ma, Liang
    Li, Bin
    Wei, Jiangxiong
    Yu, Qijun
    Jiang, Jun
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2024, 107 (11) : 7341 - 7351
  • [34] Synthesis and investigation of hollow SiO2 nanospheres
    Zou, Hua
    Ran, Qian-Ping
    Wu, Shi-Shan
    Shen, Jian
    Gaofenzi Cailiao Kexue Yu Gongcheng/Polymeric Materials Science and Engineering, 2010, 26 (03): : 1 - 3
  • [35] Resistive Switching Characteristics of Cu/SiO2/Pt Structure
    Liu, Chih-Yi
    Sung, Po-Wei
    Lai, Chun-Hung
    Wang, Hung-Yu
    FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 167 - +
  • [36] Energetics and electronic structure of semiconducting nanotubes adsorbed on SiO2 surfaces
    Okada, Susumu
    CHEMICAL PHYSICS LETTERS, 2009, 474 (4-6) : 302 - 306
  • [37] The electronic structure and bonding of MAO on the SiO2 (111) hydrated surface
    Juan, A
    Damiani, D
    Pistonesi, C
    García, A
    MACROMOLECULAR THEORY AND SIMULATIONS, 2001, 10 (05) : 485 - 490
  • [38] The effects of electronic field on the atomic structure of the graphene/α-SiO2 interface
    Ao, Z. M.
    Zheng, W. T.
    Jiang, Q.
    NANOTECHNOLOGY, 2008, 19 (27)
  • [39] ELECTRONIC-STRUCTURE OF SIO2(111) THIN-FILM
    CIRACI, S
    ELLIALTIOGLU, S
    SOLID STATE COMMUNICATIONS, 1981, 40 (05) : 587 - 589
  • [40] ELECTRONIC-STRUCTURE OF E1' CENTERS IN SIO2
    YIP, KL
    BEALLFOWLER, W
    PHYSICAL REVIEW B, 1975, 11 (06): : 2327 - 2338