Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

被引：44

作者：

Egawa, T ^{[1
]}

Ishikawa, H ^{[1
]}

Jimbo, T ^{[1
]}

Umeno, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.117906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron-beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm(2) were determined to be 1.1 x 10(-3), 1.9 x 10(-3), and 3.9 x 10(-3) h(-1) at ambient temperatures of 30, 50, and 80 degrees C, respectively, The activation energy of degradation was also determined to be 0.23 eV. (C) 1996 American Institute of Physics.

引用

页码：830 / 832

页数：3

共 9 条

[1]

AKASAKI I, 1996, JPN J APPL PHYS, V345, pL1517

[2] Stimulated emission from current injected InGaN/AlGaN surface emitting diode with Al reflector at room temperature [J].