SubBand absorption in organic molecular semiconductors
被引:0
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作者:
Narasimhan, KL
论文数: 0引用数: 0
h-index: 0
机构:
Tata Inst Fundamental Res, Bombay 400005, Maharashtra, IndiaTata Inst Fundamental Res, Bombay 400005, Maharashtra, India
Narasimhan, KL
[1
]
Aziz, A
论文数: 0引用数: 0
h-index: 0
机构:
Tata Inst Fundamental Res, Bombay 400005, Maharashtra, IndiaTata Inst Fundamental Res, Bombay 400005, Maharashtra, India
Aziz, A
[1
]
机构:
[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
来源:
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2
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2002年
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4746卷
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this paper we present results on subband absorption in two molecular semiconductors - tris (8 hydroxy -quinolato) Aluminium (Alq) and (TPD) in both the solid state and in solution. We show that at low energy, the absorption is governed by surface states in these semiconductors. Using photoluminescence excitation spectroscopy, we show that it is possible to to discriminate against the absorption due to surface states and measure bulk states in thin films. The absorption in the bulk is rdlated to defects absorption that arises due to a strong electron-phonon interaction. We identify the phonon modes responsible for the electron-phonon interaction in these systems.