TEM analysis of planar defects in β-SiC

被引：11

作者：

Olivier, E. J. ^{[1
]}

Neethling, J. H. ^{[1
]}

机构：

[1] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6001 Port Elizabeth, South Africa

来源：

INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 2009年 / 27卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

beta-Sic; Stacking faults; Twins; TEM; Defects;

D O I：

10.1016/j.ijrmhm.2008.09.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on a transmission electron microscopy (TEM) and high resolution TEM (HRTEM) investigation of the extended defects in beta-SiC grown on Si (0 0 1) substrates by CVD. The main defects observed were stacking faults and twins. Stacking fault contrast can be explained by using the dynamical theory of electron diffraction. It was found that in beta-SiC, stacking faults on inclined {111} planes exhibit complementary and symmetrical bright-field and dark-field fringe images. This observation is ascribed to the low anomalous absorption ratio of Bloch waves in SiC. Excellent agreement was found between experimental and simulated inclined stacking fault images in beta-SiC. Narrow dark bands on {111} planes viewed edge-on generated streaks but no additional spots in selected area diffraction patterns. HRTEM revealed that these defects are extrinsic stacking faults. Models for the introduction and evolution of the lattice defects observed will be presented. (C) 2008 Elsevier Ltd. All rights reserved

引用

页码：443 / 448

页数：6

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