Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

被引：18

作者：

Fang, Z. L. ^{[1
]}

Li, Q. F. ^{[1
]}

Shen, X. Y. ^{[1
]}

Xiong, H. ^{[1
]}

Cai, J. F. ^{[1
]}

Kang, J. Y. ^{[1
]}

Shen, W. Z. ^{[2
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 04期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; EFFICIENCY DROOP; GALLIUM NITRIDE;

D O I：

10.1063/1.4863208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QW(s) were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In0.35Ga0.65N "wetting layer," 1.56 nm In0.35-0.22Ga0.65-0.78N graded layers, and 1.56 nm In0.22Ga0.78N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhanced interband transitions from the first and second quantized electron states "e1" and "e2" to the first quantized hole state "h1." With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state. (C) 2014 AIP Publishing LLC.

引用

页数：7

共 40 条

[1] Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer [J].

Chang, Yi-An ;

Chang, Jih-Yuan ;

Kuo, Yih-Ting ;

Kuo, Yen-Kuang .

APPLIED PHYSICS LETTERS, 2012, 100 (25)

[2] Role of nanoscale strain inhomogeneity on the light emission from InGaN epilayers [J].

de Sousa Pereira, Sergio Manuel ;

O'Donnell, Kevin Peter ;

da Costa Alves, Eduardo Jorge .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (01) :37-42

[3] Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride [J].

Fang, Z. L. ;

Kang, J. Y. ;

Shen, W. Z. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (45) :17652-17656

[4] Silicon-induced strain relaxation and enhanced gallium surfactant effects on gallium nitride island shaping [J].

Fang, Z. L. ;

Kang, J. Y. ;

Huang, W. J. ;

Sun, H. T. ;

Lu, M. ;

Kong, J. F. ;

Shen, W. Z. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (13) :4925-4931

[5] InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies [J].

Fang, Z. L. ;

Lin, Y. X. ;

Kang, J. Y. .

APPLIED PHYSICS LETTERS, 2011, 98 (06)

[6] Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect [J].

Fang, Z. L. ;

Lin, D. Q. ;

Kang, J. Y. ;

Kong, J. F. ;

Shen, W. Z. .

NANOTECHNOLOGY, 2009, 20 (23)

[7] An InGaN/GaN single quantum well improved by surface modification of GaN films [J].

Fang, Z. L. ;

Kang, J. Y. ;

Shen, W. Z. .

NANOTECHNOLOGY, 2009, 20 (04)

[8]

Fang Z.L., 2012, ENCY SEMICONDUCTOR N, V1, P1

[9] Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes [J].

Feezell, Daniel F. ;

Schmidt, Mathew C. ;

DenBaars, Steven P. ;

Nakamura, Shuji .

MRS BULLETIN, 2009, 34 (05) :318-323

[10] Polarization fields of III-nitrides grown in different crystal orientations [J].

Feneberg, M. ;

Thonke, K. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (40)

← 1 2 3 4 →