Preparation of iridium films by liquid source metalorganic chemical vapor deposition

A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 degrees C from tetrahydrofuran (TNF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD =cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 degrees C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 mu Ohm cm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.