Preparation of iridium films by liquid source metalorganic chemical vapor deposition

被引：27
|
作者：
Dey, SK [1 ]
Goswami, J
Wang, CG
Majhi, P
机构：
[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期
关键词：
MOCVD; liquid source; thin film; iridium; metalorganic;
D O I：
10.1143/JJAP.38.L1052
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 degrees C from tetrahydrofuran (TNF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD =cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 degrees C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 mu Ohm cm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
引用
收藏
页码：L1052 / L1054
页数：3
相关论文
共 50 条
  • [1] Metalorganic chemical vapor deposition of complex metal oxide thin films by liquid source chemical vapor deposition
    VanBuskirk, PC
    Bilodeau, SM
    Roeder, JF
    Kirlin, PS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (4B): : 2520 - 2525
  • [2] Preparation and characterization of RuOx thin films by liquid delivery metalorganic chemical vapor deposition
    Kim, KW
    Kam, NS
    Lee, HG
    Kim, YS
    Kang, HJ
    Park, JC
    Joung, YH
    Kang, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (5A): : 2667 - 2671
  • [3] Preparation of MgO films on GaAs by metalorganic chemical vapor deposition
    Boo, JH
    Yu, KS
    Koh, W
    Kim, Y
    MATERIALS LETTERS, 1996, 26 (4-5) : 233 - 236
  • [4] PREPARATION OF SRTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KOBAYASHI, I
    WAKAO, Y
    TOMINAGA, K
    OKADA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08): : 4680 - 4683
  • [5] Preparation and surface morphology of YBa2Cu3O7-y films by metalorganic chemical vapor deposition block by block deposition using liquid sources
    Yoshida, Y
    Ito, Y
    Nagai, H
    Takai, Y
    Hirabayashi, I
    Tanaka, S
    PHYSICA C, 1998, 302 (01): : 31 - 38
  • [6] PREPARATION OF BISMUTH SILICATE FILMS ON SI WAFER BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, JH
    TSURUMI, T
    HIRANO, H
    KAMIYA, T
    MIZUTANI, N
    DAIMON, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A): : 135 - 138
  • [7] Impedance Spectroscopy of Manganite Films Prepared by Metalorganic Chemical Vapor Deposition
    Nakamura, Toshihiro
    Homma, Kohei
    Tachibana, Kunihide
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (09) : 8408 - 8411
  • [8] Metalorganic chemical vapor deposition of semiconducting ZnO thin films and nanostructures
    Kim, Sang-Woo
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2006, 16 (01): : 12 - 19
  • [9] New liquid precursors of yttrium and neodymium for metalorganic chemical vapor deposition
    Tasaki, Y
    Satoh, M
    Yoshizawa, S
    Kataoka, H
    Hidaka, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6871 - 6875
  • [10] Iridium precursor pyrolysis and oxidation reactions and direct liquid injection chemical vapor deposition of iridium films
    Endle, JP
    Sun, YM
    Nguyen, N
    Madhukar, S
    Hance, RL
    White, JM
    Ekerdt, JG
    THIN SOLID FILMS, 2001, 388 (1-2) : 126 - 133
12345