Evaluation of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light by Simulation Program with Integrated Circuit Emphasis

被引：65

作者：

Nishioka, K

Takamoto, T

Agui, T

Kaneiwa, M

Uraoka, Y

Fuyuki, T

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Sharp Co Ltd, Nara 6392198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 03期

关键词：

multi-junction solar cell; SPICE; circuit simulation; concentrated light; InGaP; GaAs; Ge;

D O I：

10.1143/JJAP.43.882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of a multi-junction solar cell under concentrated light were evaluated by Simulation Program with Integrated Circuit Emphasis (SPICE). We developed the multi-unit model and analyzed the affects of the chromatic aberration and intensity distribution for the multi-junction cells. In the multi-unit model, the same numbers of units as grid numbers are installed for every electrode, and the units were connected to each other via lateral resistances. In order to obtain the generation current from each diode, we measured the intensity of concentrated light through the pinhole using single-junction solar cells consisting of InGaP, GaAs and Ge as detectors. By using the multi-unit model, we could successfully calculate the electrical cell performances taking the chromatic aberration and intensity distribution into account, and the calculated value agreed well with the experimental value. The multi-unit model will be very useful for cell designs and performance analysis of the concentrator cells.

引用

页码：882 / 889

页数：8

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