Ion beam induced luminescence of thin films

被引：12
作者：
Brooks, RJ
Hole, DE
Townsend, PD [1 ]
Wu, Z
Gonzalo, J
Suarez-Garcia, A
Knott, P
机构：
[1] Univ Sussex, Sch Engn & Informat Technol, Brighton BN1 9QT, E Sussex, England
[2] Beijing Normal Univ, Analyt & Testing Ctr, Beijing 100875, Peoples R China
[3] CSIC, Inst Opt, E-28006 Madrid, Spain
[4] Morgan Mat Technol Ltd, Stourport DY13 8QR, Worcs, England
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 190卷
关键词：
luminescence; ionoluminescence; thin films;
D O I：
10.1016/S0168-583X(01)01256-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Precise control of ion range and ionisation rate makes ion beam induced luminescence (IBL) a useful analytical technique for studying thin films. Combinations of IBL and cathodo-luminescence (CL) offer complementary information. In the present studies of thin films of alumina produced by pulsed laser deposition (PLD), they reveal the influence of PLD growth conditions. Strong sensitisation from the presence of a layer of copper nanoparticles, changes in nanoparticles following thermal treatments and a range of intrinsic defects in the layers were observed. For multilayer films the IBL was particularly useful in noting signals from the deeper layers. Some data were also recorded for sot-gel alumina films grown on silica or borosilicate glass. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：709 / 713
页数：5
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