Spin relaxation anisotropy in two-dimensional semiconductor systems

被引：184

作者：

Averkiev, NS ^{[1
]}

Golub, LE

Willander, M

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Chalmers, Dept Phys, S-41296 Gothenburg, Sweden

[3] Gothenburg Univ, S-41296 Gothenburg, Sweden

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 12期

关键词：

D O I：

10.1088/0953-8984/14/12/202

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n and p types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin-orbit interaction due to the bulk inversion asymmetry and to the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III-V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.

引用

页码：R271 / R283

页数：13

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