Low-threshold and high-temperature operation of InGaAlAs-InP lasers

被引：48

作者：

Chen, TR

Chen, PC

Ungar, J

Newkirk, MA

Oh, S

BarChaim, N

机构：

[1] Ortel Corporation, Alhambra

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 01期

关键词：

multiquantum-well ridge waveguide laser diodes; ridge waveguide lasers;

D O I：

10.1109/68.554156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T-0 values as high as 120 K have been measured, These values are the best reported thus far for this material system.

引用

页码：17 / 18

页数：2

共 5 条

[1] MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606
[2] ULTRAHIGH TEMPERATURE AND ULTRAHIGH-SPEED OPERATION OF 1.3-MU-M STRAIN-COMPENSATED ALGAINAS/INP UNCOOLED LASER-DIODES
WANG, MC
LIN, W
SHI, TT
TU, YK
[J]. ELECTRONICS LETTERS, 1995, 31 (18) : 1584 - 1585
[3] WANG WJ, 1995, CONF PROC LEC N PHYS, V1, P280
[4] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS
ZAH, CE
BHAT, R
PATHAK, BN
FAVIRE, F
LIN, W
WANG, MC
ANDREADAKIS, NC
HWANG, DM
KOZA, MA
LEE, TP
WANG, Z
DARBY, D
FLANDERS, D
HSIEH, JJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 511 - 523
[5] ZAH CE, 1995, SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, P14, DOI 10.1109/ICIPRM.1995.522064

← 1 →