Low-threshold and high-temperature operation of InGaAlAs-InP lasers

被引：48
|
作者：
Chen, TR
Chen, PC
Ungar, J
Newkirk, MA
Oh, S
BarChaim, N
机构：
[1] Ortel Corporation, Alhambra
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 01期
关键词：
multiquantum-well ridge waveguide laser diodes; ridge waveguide lasers;
D O I：
10.1109/68.554156
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T-0 values as high as 120 K have been measured, These values are the best reported thus far for this material system.
引用
收藏
页码：17 / 18
页数：2
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